Method of manufacturing semiconductor device

ABSTRACT

Generation of adhered materials in a space over a gas guide of a shower head is inhibited. A substrate processing apparatus includes a process chamber; a buffer chamber including a dispersion unit; a process gas supply hole installed in a ceiling portion of the buffer chamber; an inert gas supply hole installed in the ceiling portion; a gas guide disposed in a gap between the dispersion unit and the ceiling portion, the gas guide including a base end portion disposed at a side of the process gas supply hole, a leading end portion disposed closer to the inert gas supply hole than to the process gas supply hole, and a plate portion connecting the base end portion and the leading end portion; a process chamber exhaust unit; and a control unit.

CROSS-REFERENCE TO RELATED PATENT APPLICATION

This U.S. non-provisional patent application is a divisional applicationof U.S. patent application Ser. No. 14/229,151 and claims priority under35 U.S.C. §119 of Japanese Patent Application No. 2014-015523, filed onJan. 30, 2014, in the Japanese Patent Office, the entire contents ofwhich are hereby incorporated by reference.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to a substrate processing apparatus and amethod of manufacturing a semiconductor device.

2. Description of the Related Art

In recent years, semiconductor devices such as flash memories havebecome highly integrated. Thus, a pattern size is being markedlydownscaled. When patterns are formed, a predetermined processingprocess, such as an oxidation process, a nitridation process, etc., maybe performed on a substrate as one process of a manufacturing process.

As a method of forming the patterns, a groove is formed betweencircuits, and a seed film, a liner film, or a line is formed. Withrecent miniaturization, the groove is formed to obtain a high aspectratio.

To form the liner film, it is necessary to form a film having good stepcoverage, which has no variation in film thickness even in an upper sidesurface, a middle side surface, a lower side surface, and a lowerportion of the groove. Due to the film having the good step coverage, asemiconductor device may have uniform characteristics between grooves,and a variation in the characteristics of the semiconductor device maybe inhibited.

A process of processing the groove having a high aspect ratio by heatinga gas or using a plasma-state gas has been attempted. However, it wasdifficult to form a film having good step coverage.

As a method of forming the film, there is an alternate supply method ofalternately supplying at least two process gases to cause a reaction onthe surface of a substrate.

Meanwhile, since it is necessary to uniformize the characteristics ofthe semiconductor device, gases need to be uniformly supplied to asurface of the substrate during formation of a thin film. Thus, asingle-wafer-type apparatus capable of uniformly supplying gases to aprocessed surface of the substrate has been developed. In thesingle-wafer-type apparatus, for example, a shower head including abuffer space is installed on a substrate to supply gases more uniformly.

In the alternate supply method, a process of purging a remnant gas usinga purge gas during the supply of each gas is known to inhibit a reactionof respective gases on the surface of the substrate. However, a filmforming time is retarded due to addition of the purge process.Accordingly, to reduce a process time, the remnant gas is exhausted bysupplying a large amount of purge gas.

In addition, a type of shower head in which a path or buffer space foreach gas is installed to prevent mixture of respective gases may beconsidered. However, since such a structure is complicated, maintenancebecomes burdensome, and costs increase. For this reason, it is practicalto use the shower head in which supply systems of two gases and a purgegas are provided in a single buffer space.

When the shower head including the buffer space common to two kinds ofgases is used, it may be inferred that remnant gases react with eachother in the shower head and adhered materials are deposited on an innerwall of the shower head. To prevent the deposition of the adheredmaterials, an exhaust port is preferably installed in a buffer chamberto efficiently remove the remnant gases from the buffer chamber, and anatmosphere of the buffer chamber is preferably exhausted through theexhaust port. In this case, a component for preventing two gases and thepurge gas (which are to be supplied to a process chamber) from diffusingtoward the exhaust port for exhausting the buffer space, for example, agas guide for forming the flow of gases, is installed in the bufferchamber. For example, the gas guide is installed between the exhaustport for exhausting the buffer space and a supply hole for supplying thetwo gases and the purge gas. The gas guide is preferably installed in aradial shape toward a dispersion plate of the shower head. Toefficiently exhaust gases from an inner space of the gas guide, an innerside of the gas guide is in communication with a space between theexhaust port for exhausting the buffer space and the gas guide.Specifically, an outer circumferential end of the gas guide is incommunication with a space between the exhaust port for exhausting thebuffer space and the gas guide.

SUMMARY OF THE INVENTION

As a result of research conducted on a conventional structure by theinventors, the following problem has been found. That is, when a processgas is supplied, the process gas diffuses from a space installed betweenan outer circumferential end of a gas guide and an exhaust port towardthe exhaust port. Since a gas diffusing from the space over the gasguide remains in a peripheral gas remaining unit, it is difficult toremove the gas even in a process of exhausting the above-describedbuffer space. Adhered materials become particles that adversely affectcharacteristics of a substrate or reduce yield.

It is a main object of the present invention to provide a substrateprocessing apparatus and a method of manufacturing a semiconductordevice, which may inhibit generation of adhered materials even in aspace above a gas guide and provide good substrate characteristics.

According to one aspect of the present invention, there is provided asubstrate processing apparatus including: a process chamber configuredto process a substrate; a buffer chamber installed above the processchamber, the buffer chamber including a dispersion unit configured touniformly supply gases into the process chamber; a process gas supplyhole installed in a ceiling portion of the buffer chamber, where aprocess gas supply unit is connected to an upstream side thereof in agas supply direction; an inert gas supply hole installed in the ceilingportion, where an inert gas supply unit is connected to an upstream sidethereof in the gas supply direction; a gas guide disposed above thedispersion plate and including a base end portion having acircumferential shape connected to a surface of the ceiling portion at adownstream side in a manner that the process gas supply hole is disposedat an inner circumferential side from the base end portion and the inertgas supply hole is disposed at an outer circumferential side from thebase end portion; a process chamber exhaust unit configured to exhaustan atmosphere of the process chamber; and a control unit configured tocontrol at least the process gas supply unit, the inert gas supply unit,and the process chamber exhaust unit.

According to another aspect of the present invention, there is provideda method of manufacturing a semiconductor device, including: a firstprocess gas supply process of supplying a source gas into a processchamber through a process gas supply hole installed in a ceiling portionof a buffer chamber via an inner region of a gas guide and a dispersionplate which is installed between the gas guide and the process chamberand forms a bottom portion of the buffer chamber, and supplying an inertgas through an inert gas supply hole installed in the ceiling portion ofthe buffer chamber via an outer region of the gas guide; a secondprocess gas supply process of supplying a reactive gas into the processchamber through the process gas supply hole via the inner region of thegas guide and the dispersion plate; and a substrate processing processof repeating the first process gas supply process and the second processgas supply process.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a cross-sectional view of a substrate processing apparatusaccording to a first embodiment of the present invention.

FIG. 2 is a flowchart illustrating a substrate processing processaccording to the first embodiment of the present invention.

FIG. 3 is a timing chart illustrating gas supply timing in a filmforming process according to the first embodiment of the presentinvention.

FIG. 4 is a flowchart illustrating the film forming process according tothe first embodiment of the present invention.

FIG. 5 is a cross-sectional view of a substrate processing apparatusaccording to a second embodiment of the present invention.

FIG. 6 is a diagram illustrating gas stagnation of the substrateprocessing apparatus according to the second embodiment of the presentinvention.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS First Embodiment ofthe Present Invention (1) Configuration of Substrate ProcessingApparatus

Hereinafter, a substrate processing apparatus according to a firstembodiment of the present invention will be described with reference toFIG. 1. FIG. 1 is a cross-sectional view of a substrate processingapparatus according to the present embodiment.

One embodiment of the present invention will now be described withreference to the accompanying drawings below. Initially, a substrateprocessing apparatus according to one embodiment of the presentinvention will be described.

A substrate processing apparatus 100 according to the present embodimentwill be described. The substrate processing apparatus 100 is anapparatus configured to process a thin film. As shown in FIG. 1, thesubstrate processing apparatus 100 is configured as a single-wafer-typesubstrate processing apparatus.

As shown in FIG. 1, the substrate processing apparatus 100 includes aprocess container 202. The process container 202 is configured as, forexample, a planar airtight container having a circular cross-section.Also, a sidewall or bottom surface of the process container 202 isformed of, for example, a metal material, such as aluminum (Al) orstainless steel (SUS). A process chamber 201 configured to process awafer 200 (e.g., a silicon wafer) which is a substrate, and a transferspace 203 are formed in the process container 202. The process container202 is constituted by an upper container 202 a, a lower container 202 b,and a shower head 230. A partition plate 204 is installed between theupper container 202 a and the lower container 202 b. A space which issurrounded by the upper process container 202 a and the shower head 230above the partition plate 204 is referred to as a process chamber space,and a space which is surrounded by the lower container 202 b below thepartition plate 204 is referred to as a transfer space. A componentwhich is configured of the upper process container 202 a and the showerhead 230 and surrounds a process space is referred to as the processchamber 201. Also, a configuration surrounding the transfer space isreferred to as a transfer chamber 203 in the process chamber 201. AnO-ring 208 for air-tightly closing the process container 202 isinstalled between the respective structures.

A substrate loading and unloading port 206 which is adjacent to a gatevalve 205 is installed at a side surface of the lower container 202 b,and the wafer 200 moves between the lower container 202 b and a transferchamber (not shown) via the substrate loading and unloading port 206. Aplurality of lift pins 207 are installed on a bottom portion of thelower container 202 b. Also, the lower container 202 b is grounded.

A substrate support unit 210 (which is also referred to as a substrateplacing unit) for supporting the wafer 200 is disposed in the processchamber 201. The substrate support unit 210 mainly includes a substrateplacing surface 211 for placing the wafer 200, a substrate placing table212 having a surface on which the substrate placing surface 211 isformed, and a substrate placing table heater 213 (which is referred toas a first heater) contained in the substrate placing table 212 andserving as a heating source for heating the wafer 200. Through holes 214through which the lift pins 207 are formed are installed in thesubstrate placing table 212 in positions corresponding to the lift pins207.

The substrate placing table 212 is supported by a shaft 217. The shaft217 penetrates a bottom portion of the process container 202 and isconnected to an elevating mechanism 218 outside the process container202. By moving the shaft 217 and the substrate placing table 212 byoperating the elevating mechanism 218, the wafer 200 placed on thesubstrate placing surface 211 may be moved upward/downward. Also, thecircumference of a lower end portion of the shaft 217 is coated with abellows 219 to maintain an air-tight state inside the process container202.

During the transfer of the wafer 200, the substrate placing table 212 ismoved downward to a substrate support table until the substrate placingsurface 211 reaches a position (a wafer transfer position) of thesubstrate loading and unloading port 206. During the processing of thewafer 200, the substrate support unit 21 is moved upward until the wafer200 is in a process position (a wafer process position) of the processchamber 201 as shown in FIG. 1.

Specifically, when the substrate placing table 212 is moved downward tothe wafer transfer position, upper end portions of the lift pins 207protrude from a top surface of the substrate placing surface 211 so thatthe lift pins 207 can support the wafer 200 from below. Also, when thesubstrate placing table 212 is moved upward to the wafer processposition, the lift pins 207 are buried from the top surface of thesubstrate placing surface 211 so that the substrate placing surface 211can support the wafer 200 from below. Also, since the lift pins 207 arein direct contact with the wafer 200, the lift pins 207 are preferablyformed of a material such as quartz or alumina.

(Process Gas Supply Hole)

A shower head 230 which will be described below is installed above theprocess chamber 201 (at an upstream side of a gas flow direction) andincludes a ceiling plate 231 [which is also referred to as a covering231]. A process gas supply hole 231 a for supplying a process gas intothe process chamber 201 is installed in the ceiling plate 231.Configuration of a process gas supply system connected to the processgas supply hole 231 a will be described below. The ceiling plate 231 isalso used as a ceiling wall of the shower head 230 or a ceiling wall ofa buffer chamber 232.

(Inert Gas Supply Hole)

In addition, an inert gas supply hole 231 b for supplying an inert gasinto the process chamber 201 is installed in the ceiling plate 231.

(Shower Head)

A shower head 230 serving as a gas dispersing mechanism is mainlyconstituted by the ceiling plate 231 and a gas dispersion plate 234. Thegas dispersion plate 234 is configured as a ceiling portion of theprocess chamber 201 and also as a bottom portion of the shower head 230.That is, the shower head 230 is installed in an upstream direction ofthe process chamber 201. A process gas is supplied into a buffer spacein the buffer chamber 232 of the shower head 230 via the process gassupply hole 231 a. Also, an inert gas is supplied into the buffer spacein the buffer chamber 232 of the shower head 230 via the inert gassupply hole 231 b.

The buffer chamber 232 is formed at a lower end portion of the covering231 and at an upper end of the gas dispersion plate 234 which will bedescribed below. That is, the gas dispersion plate 234 is installed at adownstream side of the gas flow direction when seen from the bufferchamber 232 (here, in the direction of the process chamber 201 below thebuffer chamber 232). Also, the ceiling plate 231 is installed upstreamfrom the buffer chamber 232 with respect to the gas supply direction.

The shower head 230 includes the gas dispersion plate 234 configured todisperse a gas introduced through the process gas supply hole 231 abetween a space of the buffer chamber 232 and a process space of theprocess chamber 201. A plurality of through holes 234 a are installed inthe gas dispersion plate 234. The dispersion plate 234 is disposedopposite to the substrate placing surface 211. The gas dispersion plate234 includes a protruding portion in which the through holes 234 a areinstalled and a flange portion installed around the protruding portion,and the flange portion is supported by an insulating block 233.

A gas guide 235 for forming the flow of the supplied gas is installed inthe buffer chamber 232. The gas guide 235 includes a base end portion235 a connected to the ceiling plate 231, a plate portion 235 b, and aleading end portion 235 c. The base end portion 235 a has, for example,a cylindrical shape and is connected to the ceiling plate 231 in amanner that the process gas supply hole 231 a is disposed at an innercircumferential side of a circle of the cylindrical shape, and the inertgas supply hole 231 b is disposed at an outer circumferential side ofthe circle of the cylindrical shape. Also, although a case in which thebase end portion 235 a has the cylindrical shape has been described, thepresent invention is not limited thereto and the base end portion 235 amay have a tetragonal shape, etc. That is, the base end portion 235 amay have circumferential shape in which the process gas supply hole 231a may be isolated from the inert gas supply hole 231 b by the plateportion 235 b so that the inert gas and the process gas do not mix.

The plate portion 235 b has a configuration continuous with the base endportion 235 a and has a circular conic shape, the diameter of whichincreases toward the gas dispersion plate 234 (toward the processchamber 201). The leading end portion 235 c is an end portion of theplate portion 235 b at a side other than the base end portion 235 a.That is, the leading end portion 235 c is an end portion of the plateportion 235 b at a side of the process chamber 201. The leading endportion 235 c has a cylindrical structure similar to the base endportion 235 a. The diameter of the leading end portion 235 c is formedfurther outward from an outermost circumference of a group of thethrough holes 234 a. Also, the inert gas supply hole 231 b is disposedbetween the base end portion 235 a and the leading end portion 235 c ina horizontal direction.

In the present embodiment, a region at an inner side of the plateportion 235 b [a side of the gas dispersion plate 234] is referred to asan inner region 232 a of the buffer space in the buffer chamber 232, anda region at an outer side of the plate portion 235 b [a side of theceiling plate 231] is referred to as an outer region 232 b of the bufferspace in the buffer chamber 232.

Since the plate portion 235 b is continuous with the base end portion235 a, a process gas supplied through the process gas supply hole 235 ais separated from an inert gas supplied through the inert gas supplyhole 235 b. A process gas supplied to the inner region 232 a through theprocess gas supply hole 235 a and an inert gas supplied to the outerregion 232 b through the inert gas supply hole 235 b do not affect eachother at the inner and outer sides of the plate portion 235 b.

A space 232 c is present between the leading end portion 235 c and asidewall of the buffer chamber 232. In a first process gas supplyprocess (S202) or second process gas supply process (S208) which will bedescribed below, the process gas diffuses in the inner region 232 atoward the gas dispersion plate 234, and the inert gas flows toward thegas dispersion plate 234 along a surface of the plate portion 235 bdisposed at a side of the outer region 232 b.

(First Exhaust System)

An exhaust pipe 236 is connected to an upper portion of the bufferchamber 232 via a exhaust port 231 c for a shower head. A valve 237which switches an exhaust operation on/off, a pressure adjuster 238 suchas an auto-pressure controller (APC) which controls the inside of thebuffer chamber 232 to a predetermined pressure, and a vacuum pump 239are sequentially connected in series to the exhaust pipe 236. Also, theexhaust pipe 236, the valve 237, and the pressure adjuster 238 arereferred to together as a first exhaust system or a buffer chamberexhaust unit.

(Process Gas Supply System)

A first-element-containing gas is mainly supplied from a first processgas supply system 243 containing a first gas supply pipe 243 a, and asecond-element-containing gas is supplied from a second process gassupply system 244 containing a second gas supply pipe 244 a. A processgas supply system is constituted by the first process gas supply system243 and the second process gas supply system 244.

The process gas supply system may be referred to as a process gas supplyunit.

(First Process Gas Supply System)

A first gas supply source 243 b, a mass flow controller (MFC) 243 cwhich is a flow rate controller (flow rate control unit), and a valve243 d which is an opening/closing valve are sequentially installed atthe first gas supply pipe 243 a from an upstream end.

A gas containing a first element (hereinafter, thefirst-element-containing gas) is supplied to the shower head 230 throughthe first gas supply pipe 243 a via the MFC 243 c, the valve 243 d, anda common gas supply pipe 242.

The first-element-containing as is a source gas, that is, a process gas.Here, a first element is, for example, titanium (Ti). That is, thefirst-element-containing gas is, for example, a titanium-containing gas.For example, TiCl₄ gas may be used as the titanium-containing gas. Also,the first-element-containing gas may be any one of a solid, a liquid,and a gas at normal temperature and pressure. When thefirst-element-containing gas is a liquid at normal temperature andpressure, a vaporizer (not shown) may be installed between the first gassupply source 232 b and the MFC 243 c. Here, an example in which thefirst-element-containing gas is a gas will be described.

In addition, a silicon-containing gas may be used. For example, anorganic silicon material, such as hexamethyldisilazane (C₆H₁₉NSi₂,abbreviated as HMDS), trisilylamine [(SiH₃)₃N, abbreviated as TSA], orbis(tertiary-butyl-amino)silane (SiH₂[NH(C₄H₉)]₂, abbreviated as BTBAS)gas, may be used as the silicon-containing gas. These gases may functionas precursors.

A downstream end of a first inert gas supply pipe 246 a is connected tothe first gas supply pipe 243 a downstream from the valve 243 d. Aninert gas supply source 246 b, an MFC 246 c which is a flow ratecontroller (flow rate control unit), and a valve 246 d which is anopening/closing valve are sequentially installed at the first inert gassupply pipe 246 a from the upstream end.

Here, the inert gas is, for example, nitrogen (N₂) gas. As the inertgas, not only N₂ gas but also a rare gas, such as helium (He) gas, neon(Ne) gas, argon (Ar) gas, etc., may be used.

The inert gas is supplied through the first inert gas supply pipe 246 avia the MFC 246 c, the valve 246 d, and the first gas supply pipe 243 ainto the shower head 230. The inert gas acts as a carrier gas or a raregas in a thin film forming process (S104) which will be described below.

A first process gas supply system 243 (which is also referred to as atitanium-containing gas supply system) is mainly constituted by thefirst gas supply pipe 243 a, the MFC 243 c, and the valve 243 d.

In addition, a first inert gas supply system is mainly constituted bythe first inert gas supply pipe 246 a, the MFC 246 c, and the valve 246d. Also, the first inert gas supply system may further include the inertgas supply source 246 b and the first gas supply pipe 243 a.

The first process gas supply system 243 may include the first gas supplysource 243 b and the first inert gas supply system.

The first process gas supply system 243 may be referred to as a firstprocess gas supply unit or a source gas supply unit.

(Second Process Gas Supply System)

A second gas supply source 244 b, an MFC 244 c which is a flow ratecontroller (flow rate control unit), a valve 244 d which is anopening/closing valve, and a remote plasma unit 244 e may besequentially installed at the second gas supply pipe 244 a from theupstream end.

A gas containing a second element (hereinafter, asecond-element-containing gas) is supplied through the second gas supplypipe 244 a via the MFC 244 c, the valve 244 d, the remote plasma unit244 e, and the common gas supply pipe 242 into the shower head 230. Thesecond-element-containing gas is processed by the remote plasma unit 244e to generate plasma, and the plasma is irradiated onto the wafer 200.

The second-element-containing gas is a process gas. Also, thesecond-element-containing gas may be a reactive gas reactive with thefirst-element-containing gas or a modification gas for modifying a filmcontaining the first-element-containing gas.

Here, the second-element-containing gas contains a second element otherthan the first element. The second element is, for example, any one ofoxygen (O), nitrogen (N), and carbon (C). In the present embodiment, thesecond-element-containing gas is, for example, a nitrogen-containinggas. Specifically, ammonia (NH₃) gas is used as the nitrogen-containinggas.

A second process gas supply system 244 (which is also referred to as anitrogen-containing gas supply system) is mainly constituted by thesecond gas supply pipe 244 a, the MFC 244 c, and the valve 244 d.

A downstream end of a second inert gas supply pipe 247 a is connected tothe second gas supply pipe 244 a at a downstream side of the valve 244d. An inert gas supply source 247 b, an MFC 247 c which is a flow ratecontroller (flow rate control unit), and a valve 247 d which is anopening/closing valve 247 d are sequentially installed at the secondinert gas supply pipe 247 a from the upstream end.

An inert gas is supplied through the second inert gas supply pipe 247 avia the MFC 247 c, the valve 247 d, the second gas supply pipe 244 a,and the remote plasma unit 244 e into the shower head 230. The inert gasacts as a carrier gas or a rare gas in a film forming process (S104)(which is also referred to as a thin film forming process) which will bedescribed below.

A second inert gas supply system is mainly constituted by the secondinert gas supply pipe 247 a, the MFC 247 c, and the valve 247 d. Also,the second inert gas supply system may further include the inert gassupply source 247 b, the second gas supply pipe 243 a, and the remoteplasma unit 244 e.

In addition, the second process gas supply system 244 may include thesecond gas supply source 244 b, the remote plasma unit 244 e, and thesecond inert gas supply system.

The second process gas supply system may be also referred to as a secondprocess gas supply unit or a reactive gas supply unit.

(Inert Gas Supply System)

When the wafer 200 is processed, an inert gas is mainly supplied fromthe third gas supply system 245 including the third gas supply pipe 245a.

A third gas supply source 245 b, an MFC 245 c which is a flow ratecontroller (flow rate control unit), and a valve 245 d which is anopening/closing valve 245 d are sequentially installed at the third gassupply pipe 245 a from the upstream end.

The inert gas, which is a purge gas, is supplied through the third gassupply pipe 245 a via the MFC 245 c and the valve 245 d into the showerhead 230.

Here, the inert gas is, for example, nitrogen (N₂) gas. As the inertgas, not only N₂ gas but also a rare gas, such as He gas, Ne gas, Argas, etc., may be used.

An inert gas supply system 245 is mainly constituted by the third gassupply pipe 245 a, the MFC 245 c, and the valve 245 d.

The third gas supply system 245 may further include the third gas supplysource 245 b and a cleaning gas supply system.

In a substrate processing process, an inert gas is supplied through thethird gas supply pipe 245 a via the MFC 245 c and the valve 245 d intothe shower head 230.

The inert gas supplied from the inert gas supply source 245 b acts as apurge gas for purging gases remaining in the process chamber 201 or theshower head 230 in the thin film forming process (S104) which will bedescribed below. Also, in the present disclosure, the inert gas supplysystem 245 is also referred to as the third gas supply system.

(Second Exhaust System)

An exhaust port 221 for exhausting an atmosphere of the process chamber201 is installed in an inner wall of the process chamber 201 [uppercontainer 202 a]. An exhaust pipe 222 is connected to the exhaust port221, a pressure adjuster 223, such as an APC, which controls the insideof the process chamber to a predetermined pressure, and an exhaust pump224 are sequentially connected in series to the exhaust pipe 222. Asecond exhaust system 220 (exhaust line) is mainly constituted by theexhaust port 221, the exhaust pipe 222, the pressure adjuster 223, andthe exhaust pump 224. The second exhaust system is also referred to as aprocess chamber exhaust unit.

(Controller)

The substrate processing apparatus 100 includes a controller 260configured to control an operation of each component of the substrateprocessing apparatus 100. The controller 260 includes at least anoperation unit 261 and a memory unit 262. The controller 260 calls aprogram or control recipe of the substrate processing apparatus from thememory unit 262 in response to an instruction from the controller 260 ora user and controls the operation of each of the components according tothe contents of the program or the control recipe.

(2) Substrate Processing Process

<Film Forming Process>

Next, a process of forming a thin film on the wafer 200 using thesubstrate processing apparatus 100 will be described with reference toFIGS. 2, 3, and 4. FIGS. 2, 3, and 4 are flowcharts illustrating a filmforming process according to an embodiment of the present invention. Inthe following description, an operation of each component constitutingthe substrate processing apparatus 100 is controlled by the controller260.

The substrate processing process will now be schematically describedwith reference to FIGS. 2, 3, and 4. FIG. 2 is a flowchart illustratinga substrate processing process according to the present embodiment.

Here, an example in which a titanium nitride film is formed as a thinfilm on the wafer 200 using TiCl₄ gas as the first-element-containinggas and using ammonia (NH₃) gas as the second-element-containing gaswill be described. For example, a predetermined film may be previouslyformed on the wafer 200. Also, a predetermined pattern may be previouslyformed on the wafer 200 or the predetermined film.

(Substrate Loading/Placing Process (S102))

In the substrate processing apparatus 100, the lift pins 207 penetratethe through holes 214 of the substrate placing table 212 by moving thesubstrate placing table 212 downward to the transfer position of thewafer 200. As a result, the lift pins 207 protrude only a predeterminedheight from the surface of the substrate placing table 212.Subsequently, the gate valve 205 is opened, the wafer 200 (processingsubstrate) is loaded into the process chamber 201 using a wafer carrier(not shown), and the wafer 200 is carried onto the lift pins 207. Thus,the wafer 200 is supported in a horizontal posture on the lift pins 207protruding from the surface of the substrate placing table 212.

When the wafer 200 is loaded into the process container 202, the wafercarrier escapes from the process container 202, and the gate valve 205is closed to air-tightly close the inside of the process container 202.Thereafter, the wafer 200 is placed on the substrate placing surface 211installed on the substrate placing table 212 by moving the substrateplacing table 212 upward.

When the wafer 200 is loaded into the process container 202, N₂ gaswhich is an inert gas is preferably supplied from the inert gas supplysystem into the process container 202 while exhausting the inside of theprocess container 202 using the exhaust system. That is, while theinside of the process container 202 is being exhausted by opening theAPC valve 223 by operating the exhaust pump 224, N₂ gas is preferablysupplied into the process container 202 by opening at least the valve245 d of the third gas supply system. Thus, intrusion of particles intothe process container 202 or adhesion of particles onto the wafer 200may be inhibited. Also, the exhaust pump 224 is always continuouslyoperated at least after the substrate loading/placing process (S102) hasbeen performed and until a substrate unloading process (S106) which willbe described below ends.

When the wafer 200 is placed on the substrate placing table 212, poweris supplied to the heater 213 buried in the substrate placing table 212and/or the shower head 230 so that the surface of the wafer 200 can beset to a predetermined temperature. The temperature of the wafer 200 isset to be in the range of, for example, room temperature to atemperature of 500° C., and preferably a range of room temperature to atemperature of 400° C. In this case, the temperature of the heater 213is adjusted by controlling an amount of current supplied to the heater213 based on temperature information detected by a temperature sensor(not shown).

(Film Forming Process (S104))

Next, the thin film forming process (S104) is performed. A basic flow ofthe film forming process (S104) will be described, and features of thepresent embodiment will be described in detail below.

In the thin film forming process (S104), TiCl₄ gas is supplied via thebuffer chamber 232 of the shower head 230 into the process chamber 201.After a predetermined time has elapsed since the supply of the TiCl₄gas, the supply of the TiCl₄ gas is stopped, and the TiCl₄ gas isexhausted from the buffer chamber 232 and the process chamber 201 usinga purge gas.

After the TiCl₄ gas is exhausted, plasma-state ammonia gas is suppliedinto the process chamber 201 via the buffer chamber 232. The ammonia gasreacts with a titanium-containing film formed on the wafer 200 and formsa titanium nitride film. After a predetermined time has elapsed, thesupply of the ammonia gas is stopped, and the ammonia gas is exhaustedfrom the shower head 230 and the process chamber 201 using a purge gas.

In the film forming process (S104), a titanium nitride film is formed toa desired thickness by repeating the flow.

(Substrate Unloading Process (S106))

Next, the wafer 200 is supported on the lift pins 207 protruding fromthe surface of the substrate placing table 212 by moving the substrateplacing table 212 downward. Thereafter, the gate valve 205 is opened,and the wafer 200 is unloaded from the process container 202 using thewafer carrier. Thereafter, when the substrate processing process ends,the supply of an inert gas from the third gas supply system into theprocess container 202 is stopped.

(Process Number Determining Process (S108))

After the substrate is unloaded, it is determined whether or not thenumber of times the thin film forming process was performed has reacheda predetermined number of times. When it is determined that the numberof times the thin film forming process was performed has reached thepredetermined number of times, the substrate processing process enters acleaning process. When it is determined that the number of times thethin film forming process was performed has not reached thepredetermined number of times, the substrate processing process entersthe substrate loading/placing process (S102) to start processing thenext wafer 200 which is on standby.

Next, the film forming process (S104) will be described in detail withreference to FIGS. 3 and 4.

(First Process Gas Supply Process (S202))

When each component has reached a desired temperature, the valve 243 dis opened, and the supply of TiCl₄ which is a first process gas via theprocess gas supply hole 231 a, the inner region 232 a of the bufferchamber 232, and the plurality of through holes 234 a into the processchamber 201 starts. In this case, the valve 246 d is opened, and thesupply of an inert gas which is a carrier gas also starts.

In the second process gas supply system, the valve 244 d is switchedoff, and the valve 247 d is switched on. Thus, the first process gas isprevented from being supplied into the second process gas supply system244. By preventing the supply of the first process gas, adhesion ofgases is prevented in the second process gas supply system 244.

In the third gas supply system, the valve 245 d is opened, and an inertgas is supplied via the inert gas supply hole 231 b to the outer region232 b of the buffer chamber 232. The supplied inert gas is supplied tothe space 232 c between the leading end portion 235 c and the sidewallof the buffer chamber 232 along the plate portion 235 b of the gas guide235. The supplied inert gas is used as a gas curtain for inhibiting thefirst process gas from returning to the outer region 235 b of the gasguide 235. Thus, adhesion of gases to the plate portion 235 b adjacentto the outer region 232 b or the sidewall of the buffer chamber 232 isprevented.

More preferably, the amount of the inert gas supplied from the third gassupply system is set to be such an amount as to inhibit gases fromreturning to the outer region 232 b, and also to be smaller than theamount of gases supplied from the process gas supply system. In otherwords, the amount of the inert gas supplied from the third gas supplysystem is preferably set to be smaller than the sum of the amounts ofthe first gas and the inert gas supplied from the first process gassupply system and the amount of the inert gas supplied from the secondprocess gas supply system.

Thus, dilution of the first gas in the vicinity of the leading endportion 235 c may be inhibited. As a result, the first process gas whichis a source gas may be uniformly supplied to a central portion and anouter portion of the substrate so that an in-plane surface of thesubstrate can be uniformly processed.

For example, when the first gas is supplied in such an amount as to bediluted, a difference in the supplied amount of the source gas is likelyto occur between the central and outer portions of the substrate. Inthis case, a difference in exposure level occurs between the central andouter portions of the substrate. As a result, since a difference in filmquality occurs in the in-plane surface of the substrate, device yielddecreases.

TiCl₄ gas is uniformly dispersed by the gas guide 235 in the innerregion 232 a of the buffer chamber 232. The uniformly dispersed gas isuniformly supplied via the plurality of through holes 234 a onto thewafer 200 disposed in the process chamber 201.

In this case, MFCs of the first process gas supply system and the secondprocess gas supply system are adjusted such that TiCl₄ gas which is thefirst process gas, a carrier gas thereof, or a carrier gas of the secondprocess gas supply system has a predetermined flow rate. Also, the MFC245 c is adjusted such that an inert gas which is the third process gashas a predetermined flow rate. Also, a supply flow rate of TiCl₄ gas isin the range of, for example, 100 sccm to 5,000 sccm. By appropriatelyadjusting an opening degree of the APC valve 223 by operating theexhaust pump 224, an inner pressure of the process container 202 is setto be a predetermined pressure.

The supplied TiCl₄ gas is supplied onto the wafer 200. By putting theTiCl₄ gas into contact with the wafer 200, a titanium-containing layerwhich is a first-element-containing layer is formed on the surface ofthe wafer 200.

The titanium-containing layer is formed to have a predeterminedthickness and a predetermined distribution according to, for example,the inner pressure of the process container 202, a flow rate of TiCl₄gas, a temperature of the substrate placing table 212, and a processtime of a first process region 201 a.

After a predetermined time has elapsed, the valve 243 d is closed, andthe supply of TiCl₄ gas is stopped. The valve 245 d remains switched on,and the supply of an inert gas is continuously performed.

(First Shower Head Exhaust Process (S204))

After the valve 243 d is closed and the supply of TiCl₄ gas is stopped,the valve 237 is switched on to exhaust the atmosphere of the showerhead 230. Specifically, the atmosphere of the buffer chamber 232 isexhausted. In this case, the vacuum pump 239 is previously operated.

In this case, the valve 237 which is an opening/closing valve and thevacuum pump 239 are controlled in a manner that an exhaust conductancein the buffer chamber 232 from the first exhaust system is higher than aconductance of the exhaust pump 224 via the process chamber 201. Thus,the flow of gases from the center of the buffer chamber 232 toward theshower head exhaust port 231 c is formed. As a result, gases adhered tothe wall of the buffer chamber 232 or gases floating in the buffer spacedo not enter the process chamber 201 but are exhausted from the firstexhaust system.

To rapidly exhaust the atmosphere of the buffer chamber 232, an inertgas is supplied from the third gas supply system.

More preferably, the MFC 245 c is controlled in a manner that the amountof inert gas supplied from the third gas supply system is greater thanin the first process gas supply process. By increasing the supply amountof the inert gas, the atmosphere of the buffer chamber 232 may beexhausted more rapidly. Also, a large amount of inert gas may besupplied to the inner region 232 a so that a remnant gas of the innerregion 232 a can be removed more effectively.

In other words, in the first process gas supply process, the flow rateof the inert gas is controlled to prevent the inert gas supplied fromthe third gas supply system from reaching the inner region 232 a andhindering the flow of the process gas. Also, in the first shower headexhaust process, even if the remaining first gas flows directly afterthe valve 243 d is closed off, a flow rate of the first gas iscontrolled in a manner that an inert gas supplied from the third gassupply system reaches the inner region 232 a and removes the remnant gasof the inner region 232 a. Thus, the inert gas supplied from the thirdgas supply system is controlled to have a higher flow rate in the firstshower head exhaust process than in the first process gas supplyprocess.

(First Process Chamber Exhaust Process (S206))

After a predetermined time has elapsed, while the exhaust pump 224 ofthe second exhaust system is continuously operated, an opening degree ofthe APC valve 223 and an opening degree of the valve 237 are adjusted ina manner that an exhaust conductance from the second exhaust system ishigher than an exhaust conductance from the first exhaust system via theshower head 230 in the process space. Thus, the flow of gases toward thesecond exhaust system via the process chamber 201 is formed.Accordingly, the inert gas supplied into the buffer chamber 232 may besupplied onto the substrate effectively, and the efficiency of removalof gases remaining on the substrate increases.

The supplied inert gas supplied in the process chamber exhaust process(S206) removes titanium that has not combined with the wafer 200 in thefirst process supply process (S202) from the wafer 200. Also, the valve237 is opened, and the pressure adjuster 237 and the vacuum pump 239 arecontrolled to remove TiCl₄ gas remaining in the shower head 230. After apredetermined time has elapsed, the valve 245 d is tightened to reduce asupplied amount of the inert gas, and the valve 237 is closed to cut offa space between the shower head 230 and the vacuum pump 239.

More preferably, after a predetermined time has elapsed, the valve 237is closed off while continuously operating the exhaust pump 224 of thesecond exhaust system. In this case, since the flow of gases toward thesecond exhaust system via the process chamber 201 is not affected by thefirst exhaust system, the inert gas may be supplied onto the substratemore effectively, and efficiency of removal of gases remaining on thesubstrate further increases.

After the shower head exhaust process (S204), the process chamberexhaust process (S206) is continuously performed to obtain the followingeffects. That is, since residue is removed from the buffer chamber 232in the shower head exhaust process (S204), even if gases flow over thewafer 200 in the process chamber exhaust process (S206), the remnant gasmay be prevented from being adhered onto the substrate.

(Second Process Gas Supply Process (S208))

In the first process gas supply system, an inert gas is continuouslysupplied while maintaining the valve 243 d in an off state andmaintaining the valve 247 d in an on state.

In the second process gas supply system, the valve 244 d remainsswitched on while maintaining an operation state of the remote plasmaunit 244 e. Ammonia gas passes through the remote plasma unit 244 e togenerate plasma. Plasma containing radicals as a main substance isuniformly supplied onto the substrate via the buffer chamber 232 and thethrough holes 234 a.

In this case, the MFC 244 c is adjusted in a manner that ammonia gas hasa predetermined flow rate. Also, a supply flow rate of the ammonia gasis in the range of, for example, 100 sccm to 5,000 sccm. N₂ gas which isa carrier gas may be supplied from the second inert gas supply systemalong with the ammonia gas. Also, the inner pressure of the processcontainer 202 is set to a predetermined pressure by appropriatelyadjusting an opening degree of the APC valve 223.

Ammonia gas containing radicals as a main substance is supplied onto thewafer 200. The previously formed titanium-containing layer is modifiedby ammonia radicals to form, for example, a layer containing the elementTi and the element N on the wafer 200.

A modified layer is formed to have a predetermined thickness, apredetermined distribution, and a predetermined depth to which theelement N intrudes into the titanium-containing layer, according to, forexample, an inner pressure of the process container 202, a flow rate ofthe ammonia gas, a temperature of the substrate placing table 212, and apower supply state of a plasma generating unit (not shown).

After a predetermined time has elapsed, the valve 244 d is closed off,and the supply of ammonia gas is stopped.

More preferably, in the second process gas supply process, the valve 245d connected to the third gas supply system remains switched on, and aninert gas is preferably supplied via the inert gas supply hole 231 binto the buffer chamber 232. The supplied inert gas is used as a gascurtain for inhibiting the second process gas from returning to theouter region 235 b. In the second process gas supply process, a reactionof the remnant first gas of the buffer chamber 232 with the ammonia gasmay be inhibited. Accordingly, generation of adhered materials in thebuffer chamber 232 may be inhibited with a higher probability. Also, theremnant first gas refers to a first gas which has passed over the gascurtain and returned to the outer region 232 b in the first gas supplyprocess or a first gas which has not been exhausted in the first showerhead exhaust process.

More preferably, the amount of the inert gas supplied from the third gassupply system is set to be such an amount as to inhibit gases fromreturning to the outer region 232 b, and also to be smaller than theamount of gases supplied from the process gas supply system. In otherwords, the amount of the inert gas supplied from the third gas supplysystem is preferably set to be smaller than the sum of the amounts ofthe second gas and the inert gas supplied from the second process gassupply system and the amount of the inert gas supplied from the firstprocess gas supply system.

Thus, dilution of the second gas in the vicinity of the leading endportion 235 c may be inhibited. As a result, the second process gaswhich is a reactive gas may be uniformly supplied to the central portionand the outer portion of the substrate so that the in-plane surface ofthe substrate can be uniformly processed.

For example, when the ammonia gas is supplied in such an amount as to bediluted, a difference in the supplied amount of the ammonia gas islikely to occur between the central and outer portions of the substrate.In this case, a difference in exposure level occurs between the centraland outer portions of the substrate. As a result, a difference in filmquality occurs and reduces yield.

(Second Shower Head Exhaust Process (S210))

After the valve 244 d is closed off and the supply of ammonia gas isstopped, the valve 237 is switched on to exhaust the atmosphere of theshower head 230. Specifically, the atmosphere of the buffer chamber 232is exhausted. In this case, the vacuum pump 239 is previously operated.

The valve 237 which is an opening/closing valve and the vacuum pump 239are controlled in a manner that an exhaust conductance in the bufferchamber 232 from the first exhaust system is higher than a conductanceof the exhaust pump 224 via the process chamber 201. Thus, the flow ofgases from the center of the buffer chamber 232 toward the shower headexhaust port 231 c is formed. As a result, gases adhered to the wall ofthe buffer chamber 232 or gases floating in the buffer space do notenter the process chamber 201 but are exhausted from the first exhaustsystem.

More preferably, the MFC 245 c is controlled in a manner that the amountof inert gas supplied from the third gas supply system is greater thanin the second process gas supply process. By increasing the supplyamount of the inert gas, the atmosphere of the buffer chamber 232 may beexhausted more rapidly. Also, a large amount of inert gas may besupplied to the inner region 232 a so that the remnant gas of the innerregion 232 a can be removed more effectively.

In other words, in the second gas supply process, the flow rate of theinert gas is controlled to prevent the inert gas supplied from the thirdgas supply system from reaching the inner region 232 a and hindering theflow of the process gas. Also, in the second shower head exhaustprocess, even if the remnant process gas flows directly after the valve244 d is closed off, the flow rate of the process gas is controlled in amanner that the inert gas supplied from the third gas supply systemreaches the inner region 232 a and pushes the remnant gas of the innerregion 232 a out. Thus, the inert gas supplied from the third gas supplysystem is controlled to have a higher flow rate in the second showerhead exhaust process than in the second process gas supply process.

(Second Process Chamber Exhaust Process (S212))

After a predetermined time has elapsed, while operating the exhaust pump224 of the second exhaust system, the opening degree of the APC valve223 and the opening degree of the valve 237 are adjusted in a mannerthat the exhaust conductance in the process space from the secondexhaust system is higher than the exhaust conductance from the firstexhaust system via the shower head 230. Thus, the flow of gases towardthe second exhaust system via the process chamber 201 is formed.Accordingly, the inert gas supplied into the buffer chamber 232 may besupplied onto the substrate effectively, and the efficiency of removalof gases remaining on the substrate increases.

The inert gas supplied in the process chamber exhaust process (S212)removes titanium that has not combined with the wafer 200 in the firstprocess gas supply process (S202) from the wafer 200. Also, the valve237 is opened, and the pressure adjuster 237 and the vacuum pump 239 arecontrolled to remove ammonia gas remaining in the shower head 230. Aftera predetermined time has elapsed, the valve 243 d is closed off to stopthe supply of the inert gas, and the valve 237 is closed off to cut offa space between the shower head 230 and the vacuum pump 239.

More preferably, after a predetermined time has elapsed, the exhaustpump 224 of the second exhaust system is continuously operated to closeoff the valve 237. In this case, since the flow of the remnant gas ofthe buffer chamber 232 or the supplied inert gas toward the secondexhaust system via the process chamber 201 is not affected by the firstexhaust system, the inert gas may be supplied onto the substrate moreeffectively, and efficiency of removal of the remnant gas (that has notcompletely reacted with the first gas) from the substrate furtherincreases.

After the shower head exhaust process (S204), the process chamberexhaust process (S206) is continuously performed to obtain the followingeffects. That is, since residue is removed from the buffer chamber 232in the shower head exhaust process (S204), even if gases flow over thewafer 200 in the process chamber exhaust process (S206), the remnant gasmay be prevented from being adhered onto the substrate.

(Determining Process (S214))

Thereafter, the controller 260 determines whether or not one cycle hasbeen performed a predetermined number of times.

When the one cycle has not been performed the predetermined number oftimes (in the case of No in step S214), a cycle including the firstprocess gas supply process (S202), the first shower head exhaust process(S204), the first process chamber exhaust process (S206), the secondprocess gas supply process (S208), the second shower head exhaustprocess (S210), and the second process chamber exhaust process (S212) isrepeated. When the one cycle has been performed the predetermined numberof times (in the case of Yes in step S214), the thin film formingprocess (S104) ends.

Next, a second embodiment will be described with reference to FIGS. 5and 6. In the second embodiment, since the same symbols as in the firstembodiment refer to the same components as in the first embodiment,description thereof is omitted. Also, since a substrate processingmethod according to the present embodiment is the same as in the firstembodiment, description thereof is omitted. Hereinafter, differencesbetween the present embodiment and the previous embodiment will chieflybe described.

FIG. 5 is a configuration diagram of a substrate processing apparatusaccording to the second embodiment. The second embodiment differs fromthe first embodiment in that the inert gas supply hole 231 d isinstalled outer than the leading end portion 235 c in a horizontaldirection, and inner than a contacting portion between a sidewallstructure constituting the sidewall of the buffer chamber 232 and theceiling plate 231.

FIG. 6 is a diagram for explaining the above-described contactingportion between the sidewall structure and the ceiling plate 231. Thesidewall structure of the dispersion plate 234 is in contact with theceiling plate 231 via an O-ring 251. The O-ring 251 is used as a sealmember. In the above-described configuration, a gap is installed betweenthe sidewall structure of the dispersion plate 234 and the ceiling plate231. Also, an angular portion 232 d is formed. The gap or the angularportion 232 d may serve as a gas holding unit. Even if a shower headexhaust process is performed, a process gas may remain. Thus, in thepresent embodiment, an inert gas supply hole is installed near the gasholding unit. As a result, as in the first embodiment, a process gas maybe prevented from returning to the outer region 232 b of the gas guide235 in the process gas supply process. Also, gases which pass over thegas curtain and return to the outer region 232 b may be prevented fromintruding into the gas holding unit, and gases which could not beexhausted in the shower head exhaust process may be excluded from thegas holding unit.

In the previous embodiment, a case in which a titanium nitride film isformed on the wafer 200 using a titanium-containing gas as thefirst-element-containing gas and using a nitrogen-containing gas as thesecond-element-containing gas has been described, but the presentinvention is not limited thereto. A high-k film, such as a hafnium oxide(HfO) film, a zirconium oxide (ZrO) film, or a titanium oxide (TiO)film, may be formed on the wafer 200 using, for example, asilicon-containing gas, a hafnium (Hf)-containing gas, a zirconium(Zr)-containing gas, or a titanium (Ti)-containing gas as thefirst-element-containing gas.

In the previous embodiment, a case in which the shower head exhaust port231 b connected to the first exhaust system is installed in the covering231 of the shower head 230 has been described, but the present inventionis not limited thereto. For example, the shower head exhaust port 231 bmay be installed in a side surface of the buffer chamber 232.

The present invention provides a substrate processing apparatus and amethod of manufacturing a semiconductor device, which can inhibitgeneration of adhered materials even above a gas guide and provide goodsubstrate characteristics.

Embodiments of the present invention will be supplementarily describedbelow.

(Supplementary Note 1)

According to one aspect of the present invention, there is provided asubstrate processing apparatus including: a process chamber configuredto process a substrate; a buffer chamber including a dispersion plateconfigured to uniformly supply gases into the process chamber andinstalled above the process chamber; a process gas supply hole to whicha process gas supply unit is connected at an upstream side in a gassupply direction, the process gas supply hole installed in a ceilingportion of the buffer chamber; an inert gas supply hole to which aninert gas supply unit is connected at the upstream side in the gassupply direction, the inert gas supply hole installed in the ceilingportion of the buffer chamber; a gas guide including a base end portionhaving a circumferential shape connected to a surface of the ceilingportion at a downstream side in a manner that the process gas supplyhole is disposed at an inner circumferential side of the base endportion and the inert gas supply hole is disposed at an outercircumferential side of the base end portion, the gas guide disposedabove the dispersion plate; a process chamber exhaust unit configured toexhaust the atmosphere of the process chamber; and a control unitconfigured to control at least the process gas supply unit, the inertgas supply unit, and the process chamber exhaust unit.

(Supplementary Note 2)

According to another aspect of the present invention, there is provideda substrate processing apparatus including: a process chamber configuredto process a substrate; a buffer chamber installed above the processchamber, the buffer chamber including a dispersion plate configured touniformly supply gases into the process chamber; a process gas supplyhole installed in a ceiling portion of the buffer chamber, where aprocess gas supply unit is connected to an upstream side thereof in agas supply direction; an inert gas supply hole installed in the ceilingportion of the buffer chamber, where an inert gas supply unit isconnected to an upstream side thereof in the gas supply direction; a gasguide installed at an upstream side of the dispersion plate andincluding a base end portion having a circumferential shape connected toa surface of the ceiling portion at a downstream side in a manner thatthe process gas supply hole is disposed at an inner circumferential sideof the base end portion and the inert gas supply hole is disposed at anouter circumferential side of the base end portion, a plate portionhaving a circular conic shape, a diameter of which increases toward theprocess chamber, and a leading end portion which is an end portion otherthan the base end portion of the plate portion; a process chamberexhaust unit installed below the process chamber and configured toexhaust an atmosphere of the process chamber; and a control unitconfigured to control at least the process gas supply unit, the inertgas supply unit, and the process chamber exhaust unit.

(Supplementary Note 3)

The substrate processing apparatus of Supplementary note 2, wherein theinert gas supply hole is installed between the leading end portion andthe base end portion in a horizontal direction.

(Supplementary Note 4)

The substrate processing apparatus of Supplementary note 2 or 3, whereinthe control unit is configured to control the process gas supply unitand the inert gas supply unit in manner that that a flow rate of gasessupplied through the process gas supply hole is higher than that of theinert gas supplied through the inert gas supply hole.

(Supplementary Note 5)

The substrate processing apparatus of Supplementary note 4, furtherincluding a buffer chamber exhaust unit connected to the buffer chamberand configured to exhaust the atmosphere of the buffer chamber, whereinthe control unit is configured to control the buffer chamber exhaustunit and the inert gas supply unit in a manner that the atmosphere ofthe buffer chamber is exhausted after stopping a supply of the gasesthrough the process gas supply hole by supplying the inert gas throughthe inert gas supply hole at an amount greater than an amount of theinert gas supplied through the inert gas supply hole when the gases aresupplied through the process gas supply hole.

(Supplementary Note 6)

The substrate processing apparatus of Supplementary note 2 or 3, whereinthe gases supplied through the process gas supply hole include at leastone of a source gas and a reactive gas reactive with the source gas, andthe control unit is configured to control the process gas supply unitand the inert gas supply unit in a manner that a flow rate of the gasescontaining the source gas supplied through the process gas supply holeis higher than that of the inert gas supplied through the inert gassupply hole.

(Supplementary Note 7)

The substrate processing apparatus of Supplementary note 6, furtherincluding a buffer chamber exhaust unit connected to the buffer chamberand configured to exhaust the atmosphere of the buffer chamber, whereinthe control unit is configured to control the buffer chamber exhaustunit and the inert gas supply unit in a manner that the atmosphere ofthe buffer chamber is exhausted after stopping a supply of the gasescontaining the source gas through the process gas supply hole bysupplying the inert gas through the inert gas supply hole at an amountgreater than that of the inert gas supplied through the inert gas supplyhole when the gases containing the source gas are supplied through theprocess gas supply hole.

(Supplementary Note 8)

The substrate processing apparatus of Supplementary note 2 or 3, whereinthe gases supplied through the process gas supply hole include at leastone of a source gas and a reactive gas reactive with the source gas, andthe control unit is configured to control the process gas supply unitand the inert gas supply unit in a manner that a flow rate of the gasescontaining the reactive gas supplied through the process gas supply holeis higher than that of the inert gas supplied through the inert gassupply hole.

(Supplementary Note 9)

The substrate processing apparatus of Supplementary note 8, furthercomprising a buffer chamber exhaust unit connected to the buffer chamberand configured to exhaust an atmosphere of the buffer chamber,

wherein the control unit is configured to control the buffer chamberexhaust unit and the inert gas supply unit in a manner that theatmosphere of the buffer chamber is exhausted after stopping a supply ofthe gases containing the reactive gas through the process gas supplyhole by supplying the inert gas through the inert gas supply hole at anamount greater than that of the inert gas supplied through the inert gassupply hole when the gases containing the reactive gas are suppliedthrough the process gas supply hole.

(Supplementary Note 11)

The substrate processing apparatus of Supplementary note 2, wherein theinert gas supply hole is installed outer than the leading end portion ina horizontal direction and inner than a contacting portion between asidewall structure constituting a sidewall of the buffer chamber and aceiling structure constituting the ceiling portion of the bufferchamber.

(Supplementary Note 12)

According to another aspect of the present invention, there is provideda method of manufacturing a semiconductor device, including: a firstprocess gas supply process of supplying a source gas to a processchamber through a process gas supply hole installed in a ceiling portionof a buffer chamber via an inner region of a gas guide and a dispersionplate installed between the gas guide and the process chamber andforming a bottom portion of the buffer chamber, and supplying an inertgas through an inert gas supply hole installed in the ceiling portion ofthe buffer chamber via an outer region of the gas guide; a secondprocess gas supply process of supplying a reactive gas to the processchamber through the process gas supply hole via the inner region of thegas guide and the dispersion plate; and a substrate processing processof repeating the first process gas supply process and the second processgas supply process.

(Supplementary Note 13)

According to another aspect of the present invention, there is provideda substrate processing apparatus including: a process chamber configuredto process a substrate; a buffer chamber installed at an upstream sidefrom the process chamber in a flow direction of a gas supplied into theprocess chamber; a first region installed in the buffer chamber; asecond region installed in the buffer chamber and configured tocommunicate with the first region; a gas supply unit connected to thefirst region; an inert gas supply unit connected to the second region;and a exhaust unit connected to the second region.

1. A method of manufacturing a semiconductor device, comprising: (a)loading a substrate into a process chamber; and (b) supplying a processgas into the process chamber via a buffer chamber to process thesubstrate, Wherein the process gas and an inert gas are supplied intothe buffer chamber through a process gas supply hole and an inert gassupply hole disposed in a ceiling portion of the buffer chamber in (b),and the process gas and the inert gas supplied into the process chamberare then supplied into the process chamber via a gas guide disposedbetween the process gas supply hole and the inert gas supply hole and adispersion unit constituting a lower portion of the buffer chamber.
 2. Asubstrate processing apparatus comprising: a process chamber configuredto process a substrate; a buffer chamber installed above the processchamber, the buffer chamber including a dispersion unit configured touniformly supply gases into the process chamber; a process gas supplyhole installed in a ceiling portion of the buffer chamber with a processgas supply unit is connected to an upstream side thereof in a gas supplydirection; an inert gas supply hole installed in a wall defining thebuffer chamber with an inert gas supply unit is connected to an upstreamside thereof in the gas supply direction; a gas guide disposed betweenthe process gas supply hole and the inert gas supply hole; a processchamber exhaust unit installed below the process chamber and configuredto exhaust an atmosphere of the process chamber; and a control unitconfigured to control at least the process gas supply unit, the inertgas supply unit, and the process chamber exhaust unit.
 3. The apparatusof claim 2, wherein the gas guide has a circumferential shape with theprocess gas supply hole as a center of the circumferential shape.
 4. Theapparatus of claim 2, wherein the control unit is configured to controlthe process gas supply unit and the inert gas supply unit in a mannerthat a flow rate of gases supplied through the process gas supply holeis higher than that of an inert gas supplied through the inert gassupply hole.
 5. The apparatus of claim 3, wherein the control unitcontrol is configured to control the process gas supply unit and theinert gas supply unit in a manner that a flow rate of gases suppliedthrough the process gas supply hole is higher than that of an inert gassupplied through the inert gas supply hole.
 6. The apparatus of claim 4,further comprising a buffer chamber exhaust unit connected to the bufferchamber and configured to exhaust an atmosphere of the buffer chamber,wherein the control unit is configured to control the buffer chamberexhaust unit and the inert gas supply unit in a manner that theatmosphere of the buffer chamber is exhausted after stopping a supply ofthe gases through the process gas supply hole by supplying the inert gasthrough the inert gas supply hole at an amount greater than an amount ofthe inert gas supplied through the inert gas supply hole when the gasesare supplied through the process gas supply hole.
 7. The apparatus ofclaim 5, further comprising a buffer chamber exhaust unit connected tothe buffer chamber and configured to exhaust an atmosphere of the bufferchamber, wherein the control unit is configured to control the bufferchamber exhaust unit and the inert gas supply unit in a manner that theatmosphere of the buffer chamber is exhausted after stopping a supply ofthe gases through the process gas supply hole by supplying the inert gasthrough the inert gas supply hole at an amount greater than an amount ofthe inert gas supplied through the inert gas supply hole when the gasesare supplied through the process gas supply hole.
 8. The apparatus ofclaim 2, wherein the gases supplied through the process gas supply holeinclude at least one of a source gas and a reactive gas reactive withthe source gas, and the control unit is configured to control theprocess gas supply unit and the inert gas supply unit in a manner that aflow rate of the gases containing the source gas supplied through theprocess gas supply hole is higher than that of the inert gas suppliedthrough the inert gas supply hole.
 9. The apparatus of claim 3, whereinthe gases supplied through the process gas supply hole include at leastone of a source gas and a reactive gas reactive with the source gas, andthe control unit is configured to control the process gas supply unitand the inert gas supply unit in a manner that a flow rate of the gasescontaining the source gas supplied through the process gas supply holeis higher than that of the inert gas supplied through the inert gassupply hole.
 10. The apparatus of claim 8, further comprising a bufferchamber exhaust unit connected to the buffer chamber and configured toexhaust an atmosphere of the buffer chamber, wherein the control unit isconfigured to control the buffer chamber exhaust unit and the inert gassupply unit in a manner that the atmosphere of the buffer chamber isexhausted after stopping a supply of the gases containing the source gasthrough the process gas supply hole by supplying the inert gas throughthe inert gas supply hole at an amount greater than that of the inertgas supplied through the inert gas supply hole when the gases containingthe source gas are supplied through the process gas supply hole.
 11. Theapparatus of claim 2, wherein the gases supplied through the process gassupply hole include at least one of a source gas and a reactive gasreactive with the source gas, and the control unit is configured tocontrol the process gas supply unit and the inert gas supply unit in amanner that a flow rate of the gases containing the reactive gassupplied through the process gas supply hole is higher than that of theinert gas supplied through the inert gas supply hole.
 12. The apparatusof claim 3, wherein the gases supplied through the process gas supplyhole include at least one of a source gas and a reactive gas reactivewith the source gas, and the control unit is configured to control theprocess gas supply unit and the inert gas supply unit in a manner that aflow rate of the gases containing the reactive gas supplied through theprocess gas supply hole is higher than that of the inert gas suppliedthrough the inert gas supply hole.
 13. The apparatus of claim 11,further comprising a buffer chamber exhaust unit connected to the bufferchamber and configured to exhaust an atmosphere of the buffer chamber,wherein the control unit is configured to control the buffer chamberexhaust unit and the inert gas supply unit in a manner that theatmosphere of the buffer chamber is exhausted after stopping a supply ofthe gases containing the reactive gas through the process gas supplyhole by supplying the inert gas through the inert gas supply hole at anamount greater than that of the inert gas supplied through the inert gassupply hole when the gases containing the reactive gas are suppliedthrough the process gas supply hole.
 14. The apparatus of claim 12,further comprising a buffer chamber exhaust unit connected to the bufferchamber and configured to exhaust an atmosphere of the buffer chamber,wherein the control unit is configured to control the buffer chamberexhaust unit and the inert gas supply unit in a manner that theatmosphere of the buffer chamber is exhausted after stopping a supply ofthe gases containing the reactive gas through the process gas supplyhole by supplying the inert gas through the inert gas supply hole at anamount greater than that of the inert gas supplied through the inert gassupply hole when the gases containing the reactive gas are suppliedthrough the process gas supply hole.
 15. A method of manufacturing asemiconductor device, comprising: (a) loading a substrate into a processchamber; and (b) supplying a process gas into the process chamber via abuffer chamber to process the substrate, Wherein the process gas and aninert gas are supplied into the buffer chamber through a process gassupply hole and an inert gas supply hole disposed in a ceiling portionof the buffer chamber in (b), and the process gas and the inert gassupplied into the process chamber is then supplied into the processchamber via a gas guide disposed between the process gas supply hole andthe inert gas supply hole and a dispersion unit constituting a lowerportion of the buffer chamber.